?001 fairchild semiconductor corporation RURU150120 rev. a file number 4146.1 RURU150120 150a, 1200v ultrafast diode the RURU150120 is an ultrafast diode with soft recovery characteristics (t rr < 200ns). it has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction. this device is intended for use as a freewheeling/clamping diode and recti?r in a variety of switching power supplies and other power switching applications. its low stored charge and ultrafast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. formerly developmental type ta49073. symbol features ultrafast with soft recovery . . . . . . . . . . . . . . . . . . <200ns operating temperature . . . . . . . . . . . . . . . . . . . . . . 175 o c reverse voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200v avalanche energy rated planar construction applications switching power supplies power switching circuits general purpose packaging single lead jedec style to-218 ordering information part number package brand RURU150120 to-218 rur150120 note: when ordering, use the entire part number. k a cathode (flange) anode absolute maximum ratings t c = 25 o c, unless otherwise speci?d RURU150120 units peak repetitive reverse voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v rrm 1200 v working peak reverse voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v rwm 1200 v dc blocking voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v r 1200 v average recti?d forward current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i f(av) t c = 60 o c 150 a repetitive peak surge current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . i frm square wave, 20khz 300 a nonrepetitive peak surge current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .i fsm halfwave, 1 phase, 60hz 1500 a maximum power dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . p d 375 w avalanche energy (see figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . e avl 50 mj operating and storage temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . t stg , t j -65 to 175 o c data sheet january 2000
?001 fairchild semiconductor corporation RURU150120 rev. a electrical speci?ations t c = 25 o c, unless otherwise speci?d symbol test condition min typ max units v f i f = 150a - - 2.1 v i f = 150a, t c = 150 o c - - 1.9 v i r v r = 1200v - - 250 a v r = 1200v, t c = 150 o c - - 3.0 ma t rr i f = 1a, di f /dt = 200a/ s - - 200 ns i f = 150a, di f /dt = 200a/ s - - 250 ns t a i f = 150a, di f /dt = 200a/ s - 140 - ns t b i f = 150a, di f /dt = 200a/ s - 80 - ns q rr i f = 150a, di f /dt = 200a/ s - 2000 - nc c j v r = 10v, i f = 0a - 420 - pf r jc - - 0.4 o c/w definitions v f = instantaneous forward voltage (pw = 300 s, d = 2%). i r = instantaneous reverse current. t rr = reverse recovery time (see figure 9), summation of t a + t b . t a = time to reach peak reverse current (see figure 9). t b = time from peak i rm to projected zero crossing of i rm based on a straight line from peak i rm through 25% of i rm (see figure 9). q rr = reverse recovery charge. c j = junction capacitance. r jc = thermal resistance junction to case. pw = pulse width. d = duty cycle. typical performance curves figure 1. forward current vs forward voltage figure 2. reverse current vs reverse voltage v f , forward voltage (v) 1 100 10 0 0.5 1 2 1.5 i f , forward current (a) 2.5 500 175 o c 25 o c 100 o c 0 1200 800 600 400 100 0.01 0.1 1 10 1000 200 1000 i r , reverse current ( a) v r , reverse voltage (v) 25 o c 100 o c 175 o c 3000 RURU150120
?001 fairchild semiconductor corporation RURU150120 rev. a figure 3. t rr , t a and t b curves vs forward current figure 4. t rr , t a and t b curves vs forward current figure 5. t rr , t a and t b curves vs forward current figure 6. current derating curve figure 7. junction capacitance vs reverse voltage typical performance curves (continued) i f , forward current (a) 0 200 250 150 100 50 t, recovery times (ns) 150 110 t b 50 t rr t a t c = 25 o c, di f /dt = 200a/ s i f , forward current (a) t, recovery times (ns) t b t a 150 11050 0 200 300 100 500 400 t rr t c = 100 o c, di f /dt = 200a/ s i f , forward current (a) 0 200 400 t, recovery times (ns) t rr 800 t b t a 600 150 11050 t c = 175 o c, di f /dt = 200a/ s 150 25 0 50 100 150 25 175 125 50 75 100 dc t c , case temperature ( o c) i f(av) , average forward current (a) 75 sq. wave 125 v r , reverse voltage (v) 300 0 900 0 50 100 150 200 c j , junction capacitance (pf) 1500 600 1200 RURU150120
?001 fairchild semiconductor corporation RURU150120 rev. a test circuits and waveforms figure 8. t rr test circuit figure 9. t rr waveforms and definitions figure 10. avalanche energy test circuit figure 11. avalanche current and voltage waveforms r g l v dd igbt current sense dut v ge t 1 t 2 v ge amplitude and t 1 and t 2 control i f r g control di f /dt + - dt di f i f t rr t a t b 0 i rm 0.25 i rm dut current sense + lr v dd r < 0.1 ? e avl = 1/2li 2 [v r(avl) /(v r(avl) - v dd )] q 1 = igbt (bv ces > dut v r(avl) ) - v dd q 1 i max = 1.6a l = 40mh iv t 0 t 1 t 2 i l v avl t i l RURU150120
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